PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output. SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor] Panasonic, Corp.
|
PEMH16 PUMH16 PEMH16-PUMH16-15 |
NPN/NPN resistor-equipped transistors; NPN-NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR NPN/NPN resistor-equipped transistors R1 = 22 kΩ, R2 = 47 kΩ
|
NXP Semiconductors N.V.
|
2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN SILICON TRANSISTORS NPN硅三极管 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp. NEC Corp. NEC[NEC]
|
2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=2.2千欧姆,R2=47千欧
|
NXP Semiconductors N.V.
|
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR NPN Transistor 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation MICROSEMI CORP-LAWRENCE
|
FZT491 FZT491A |
NPN Low Sat Transistor NPN Med Power Transistor SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Style:Wall Mount Receptacle; Insert Arrangement:18-11
|
Zetex Semiconductors Diodes Incorporated
|
ZX5T851A ZX5T851ASTZ ZX5T851ASTOA |
NPN Med Power Transistor 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
Zetex Semiconductor PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
|
|